GF will qualify the licensed GaN technology at its manufacturing facility in Burlington, Vermont, leveraging the site’s expertise in high-voltage GaN-on-Silicon technology to accelerate volume ...

An abbreviation for “High Electron Mobility Transistor.” A field-effect transistor (FET) with a heterostructure where electrons are supplied and transported in separate layers, using compound ...

Belgian research hub Imec has achieved a record GaN breakdown voltage exceeding 650V using Shin-Etsu Chemical’s 300-mm QST substrate, which has been adopted for Imec's 300-mm GaN power device ...

GlobalFoundries (GF) has entered into a technology licensing agreement with TSMC for 650V and 80V GaN technology. This move aims to will accelerate GF’s next generation of GaN products for data centre ...

What is a micro-light source? A “Micro-light source” is a light source with a side measuring less than 100 microns (1/10th of a millimeter). Examples include short-cavity lasers and micro-LEDs.

Syracuse-developed vGaN semiconductors target higher voltages and switching speeds for AI data centers and electric vehicles ...

2012 Darnell Power Forum program announced includes 1/2-day pre-conference seminar “Putting GaN to work in your power supply” Corona, California, August 14, 2012 – The Plenary speakers at the 2012 ...

GlobalFoundries (GFS) announced that it has entered into a technology licensing agreement with TSMC (TSM) for 650V and 80V Gallium Nitride ...