Abstract: Increasingly, consumer electronic devices utilize power supplies that have switching frequencies up to several tens of kilohertz. Consequently, emission in the frequency range 2 to 150kHz ...
Abstract: In this letter, silicon carbide MOSFET-based integrated circuits have been designed, fabricated, and successfully tested from -193 °C (80 K) to 500 °C. Silicon carbide single MOSFETs ...
Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea Research Institute of Advanced Materials (RIAM), Seoul National University, Seoul 08826, ...
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