Abstract: A sub-nanometer field-effect transistor (FET) with MoSi2N4 as the channel material is investigated using non-equilibrium Green’s function (NEGF) formalism for possible application in modern ...
Abstract: High-performance astronomical infrared detectors and front-end electronics often operate at temperatures from roughly 77 to 7 K and 120 to 40 K, respectively, for low dark current and noise.
This project is a C++-based Simple VLSI Stick Diagram Generator that creates CMOS stick diagrams from Boolean logic expressions. Using SFML for visualization, it constructs NMOS and PMOS transistor ...
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