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Why this research matters: Sn-based perovskite semiconductors have emerged as ideal candidates for field-effect transistors (FETs), due to their advantages of low-temperature solution-processability ...

MIT researchers with colleagues from the University of Chemistry and Technology in Prague have used 2D CrSBr, a van der Waals antiferromagnetic semiconductor, to create a transistor that could enable ...

For the first time, researchers at TU Wien have successfully manufactured a silicon-germanium (SiGe) transistor using an alternative approach that will not only allow for smaller dimensions in the ...

MIT researchers developed a more powerful magnetic transistor that could be used to design simpler circuits and create faster and more energy-efficient electronics.

The smaller electronic components become, the more complex their manufacture becomes. This has been a major problem for the chip industry for years. At TU Wien, researchers have now succeeded for the ...

Key TakeawaysBerkeley Lab scientists showed a novel way to build advanced transistors decades before similar structures reached smartphones.Their ...

Abstract: In this work, a ferroelectric field-effect transistor (FEFET) is systematically characterized and compared with an equivalent standard MOSFET with an equivalent oxide thickness. We show that ...